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PTFA192001F Datasheet, Infineon Technologies

PTFA192001F fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA192001F Avg. rating / M : 1.0 rating-14

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PTFA192001F Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earle.

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